VISIBLE PHOTOLUMINESCENCE FROM ANODICALLY OXIDIZED POROUS SILICON

被引：16

作者：

ITO, T

MOTOI, K

ARAKAKI, O

HATTA, A

HIRAKI, A

机构：

[1] Department of Electrical Engineering, Osaka University, Suita, Osaka

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 7A期

关键词：

POROUS SILICON; PHOTOLUMINESCENCE; ANODIC OXIDATION; SIZE EFFECT; BLUE SHIFT; LOCALIZED STATE;

D O I：

10.1143/JJAP.33.L941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Porous silicon (PS) anodically oxidized just after anodization of a silicon wafer has been investigated. Room-temperature photoluminescence (PL) peaks shifted to shorter wavelengths at the initial oxidation stage, followed by the PL blue shift saturation upon further oxidation. The temperature coefficient of the PL peak energy was -0.2 meV/K in the former while it was -0.5 meV/K in the latter. PL excitation spectra around 4 eV also showed changes corresponding to the PL blue shifts with oxidation. The PL mechanism is discussed in relation to band-gap widening due to the size reduction effect and appearance of luminescence centers.

引用

页码：L941 / L944

页数：4

共 22 条

[1]

BRANDT MS, 1993, MATER RES SOC SYMP P, V298, P301, DOI 10.1557/PROC-298-301

[2] PHOTOLUMINESCENCE OF HIGH POROSITY AND OF ELECTROCHEMICALLY OXIDIZED POROUS SILICON LAYERS [J].