STRUCTURAL-CHANGE OF CRYSTALLINE POROUS SILICON WITH CHEMISORPTION

被引：26

作者：

ITO, T ^{[1
]}

YASUMATSU, T ^{[1
]}

WATABE, H ^{[1
]}

HIRAKI, A ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD,OSAKA 53091,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 02期

关键词：

AM; 1; method; Anodization; Cluster calculation; Molecular orbital; Porous silicon; Structural change;

D O I：

10.1143/JJAP.29.L201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Anodized porous silicon (PS) has been investigated in relation to its structural change at elevated temperatures of ≦1100°C in a vacuum by means of infrared spectroscopy, scanning electron microscopy, X-ray diffraction and gas adsorption techniques. The structural change observed is strongly dependent on foreign atoms chemisorbed or bonded to Si atoms on the pores in PS; in the case of chemisorption of H atoms, a significant change in the pore structure is induced, while in the case of O, the formation of thin oxide walls (1–2 nm) prevents Si atoms from moving about. These results are compared with molecular orbital calculations (AM1 method) for Si14H20and its related clusters. The importance of the surface energy is consistently indicated for the structural change observed. © 1990 IOP Publishing Ltd.

引用

页码：L201 / L204

页数：4

共 15 条

[1] DETERMINATION OF LATTICE-PARAMETER AND ELASTIC PROPERTIES OF POROUS SILICON BY X-RAY-DIFFRACTION [J].