Exchange coupling control and thermal endurance of synthetic antiferromagnet structure for MRAM

被引:25
作者
Pietambaram, SV [1 ]
Janesky, J [1 ]
Dave, RW [1 ]
Sun, JJ [1 ]
Steiner, G [1 ]
Slaughter, JM [1 ]
机构
[1] Freescale Semicond, Technol Solut, Chandler, AZ 85224 USA
关键词
exchange coupling; magnetoresistive random access memory (MRAM); synthetic antiferromagnet (SAF); structures; thermal activation; thermal endurance;
D O I
10.1109/TMAG.2004.834209
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Synthetic antiferromagnet (SAF) structures are a key element of TMR and GMR read heads and MRAM devices. Control of the SAF coupling strength and thermal endurance are key issues for these technologies. We find that the coupling strength increases with stronger crystalline texture in polycrystalline NiFe SAFs, and, surprisingly, we observe a strong dependence on seed layer in amorphous CoFeB SAFs. We also have developed an analysis method for evaluating thermal endurance of SAFs and show that failure of the SAF can be modeled as a thermally activated diffusion process. The analysis is used to predict the time to failure at any temperature, thus allowing accelerated failure analysis for SAF-based devices. The stability improves dramatically with increasing Ru spacer thickness. The time to failure for typical NiFe SAFs was found to be > 10 years at 120 degreesC.
引用
收藏
页码:2619 / 2621
页数:3
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