Muonium transitions in n-type gallium nitride

被引：10

作者：

Dawdy, MR

Lichti, RL ^{[1
]}

Cox, SFJ

Head, TL

Schwab, C

机构：

[1] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA

[2] Rutherford Appleton Lab, ISIS Facil, Chilton OX11 0QX, England

[3] UCL, London WCE 6BT, England

[4] CNRS, PHASE, F-67037 Strasbourg, France

来源：

PHYSICA B-CONDENSED MATTER | 2000年 / 289卷

基金：

美国国家科学基金会;

关键词：

Mu(-); GaN; zero-field mu SR; transition rates;

D O I：

10.1016/S0921-4526(00)00248-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The temperature-dependent asymmetries for zero-field relaxation components are used to characterize muonium transitions in n-type GaN. Kubo-Toyabe components are associated with Mu(-) states and an exponential is assigned to Mu(0) centers. Transitions observed in the 150-200 K region result in Mu(-) trapped at a metastable site. A model-dependent analysis allows separation of contributions from the two Mu(-) states. The Mu(0)-related rate diverges near 600 K, and Mu(-) begins to exit the metastable location. Approximate transition energies are obtained within this constrained treatment. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：546 / 549

页数：4

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