Negatively charged muonium states in gallium nitride

被引:7
作者
Lichti, RL [1 ]
Dawdy, MR
Head, TL
Cox, SFJ
Hitti, B
Schwab, C
机构
[1] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA
[2] Rutherford Appleton Lab, ISIS Facil, Didcot OX11 0QX, Oxon, England
[3] UCL, London WCE 6BT, England
[4] TRIUMF, Vancouver, BC V6T 2A3, Canada
[5] PHASE, Ctr Natl Rech Sci, F-67037 Strasbourg, France
基金
美国国家科学基金会;
关键词
muonium; hydrogen; gallium nitride; mu SR;
D O I
10.1016/S0921-4526(99)00420-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Muon nuclear-quadrupole level-crossing resonances (QLCR) and zero-field muon spin depolarization functions are identified for negatively charged muonium (Mu(-)) centers in wurtzite-structured GaN,The QLCR spectra imply that Mu(-) occupies interstitial locations next to Ga atoms, consistent with the two inequivalent Ga anti-bonding sites. Mu(-) related depolarization shows an increase in average dipolar fields near 200K and indicates motion above 500K, Transitions suggested by relaxation features are briefly discussed. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:116 / 119
页数:4
相关论文
共 8 条
[1]   Muonium in semiconductors and some implications for hydrogen impurities [J].
Estle, TL ;
Lichti, RL .
HYPERFINE INTERACTIONS, 1996, 97-8 (1-4) :171-192
[2]  
Estreicher SK, 1997, OPTOELEC PROP SEMIC, V2, P171
[3]   Theoretical study of hydrogen in cubic GaN [J].
Estreicher, SK ;
Maric, DM .
III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES, 1996, 423 :613-618
[4]   ZERO-FIELD AND LOW-FIELD SPIN RELAXATION STUDIED BY POSITIVE MUONS [J].
HAYANO, RS ;
UEMURA, YJ ;
IMAZATO, J ;
NISHIDA, N ;
YAMAZAKI, T ;
KUBO, R .
PHYSICAL REVIEW B, 1979, 20 (03) :850-859
[5]  
Lichti RL, 1999, SEMICONDUCT SEMIMET, V61, P311
[6]   HYDROGEN IN GAN - NOVEL ASPECTS OF A COMMON IMPURITY [J].
NEUGEBAUER, J ;
VAN DE WALLE, CG .
PHYSICAL REVIEW LETTERS, 1995, 75 (24) :4452-4455
[7]   Hydrogen in GaN-experiments [J].
Pearton, SJ ;
Lee, JW ;
Wilson, RG ;
Zavada, JM ;
Weinstein, MG ;
Song, CY ;
Stavola, M .
HYDROGEN IN SEMICONDUCTORS AND METALS, 1998, 513 :229-240
[8]   INTERSTITIAL HYDROGEN IN CUBIC AND HEXAGONAL SIC [J].
ROBERSON, MA ;
ESTREICHER, SK .
PHYSICAL REVIEW B, 1991, 44 (19) :10578-10584