An InAs-based intersubband quantum cascade laser

被引：37

作者：

Ohtani, K ^{[1
]}

Ohno, H ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 11B期

关键词：

quantum cascade laser; type-II quantum well; intersubband transition; molecular beam epitaxy;

D O I：

10.1143/JJAP.41.L1279

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quantum cascade laser structures using InAs quantum wells are designed, grown by molecular beam epitaxy, and processed into lasers. The intersubband transition is chosen to be bound-to-continuum and the double plasmon waveguide is employed as a cladding structure. Lasing at 10.1 mum has been observed at 4 K with a threshold current density of 5.2 kA/cm(2).

引用

收藏

页码：L1279 / L1280

页数：2

相关论文

共 17 条

[1] Quantum cascade lasers: Ultrahigh-Speed operation, optical wireless communication, narrow linewidth, and far-infrared emission [J].

Capasso, F ;

Paiella, R ;

Martini, R ;

Colombelli, R ;

Gmachl, C ;

Myers, TL ;

Taubman, MS ;

Williams, RM ;

Bethea, CG ;

Unterrainer, K ;

Hwang, HY ;

Sivco, DL ;

Cho, AY ;

Sergent, AM ;

Liu, HC ;

Whittaker, EA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (06) :511-532

[2] Quantum cascade lasers [J].

Capasso, F ;

Gmachl, C ;

Sivco, DL ;

Cho, AY .

PHYSICS TODAY, 2002, 55 (05) :34-40

[3] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].

ESAKI, L ;

TSU, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :61-&

[4] QUANTUM CASCADE LASER [J].

FAIST, J ;

CAPASSO, F ;

SIVCO, DL ;

SIRTORI, C ;

HUTCHINSON, AL ;

CHO, AY .

SCIENCE, 1994, 264 (5158) :553-556

[5] Quantum-cascade lasers based on a bound-to-continuum transition [J].

Faist, J ;

Beck, M ;

Aellen, T ;

Gini, E .

APPLIED PHYSICS LETTERS, 2001, 78 (02) :147-149

[6] ENERGY-DEPENDENT CYCLOTRON MASS IN INAS/ALSB QUANTUM-WELLS [J].

GAUER, C ;

SCRIBA, J ;

WIXFORTH, A ;

KOTTHAUS, JP ;

BOLOGNESI, CR ;

NGUYEN, C ;

BRAR, B ;

KROEMER, H .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (09) :1580-1583

[7] Optical gain of type II inter-sub-band quantum cascade lasers [J].

Jimenez, JL ;

Mendez, EE .

SOLID STATE COMMUNICATIONS, 1999, 110 (10) :537-541

[8]

KAZARINOV RF, 1971, SOV PHYS SEMICOND+, V5, P707

[9] OPTOELECTRONIC DEVICES BASED ON TYPE-II POLYTYPE TUNNEL HETEROSTRUCTURES [J].

OHNO, H ;

ESAKI, L ;

MENDEZ, EE .

APPLIED PHYSICS LETTERS, 1992, 60 (25) :3153-3155

[10] DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS BY MBE [J].

OHNO, H ;

BARNARD, J ;

WOOD, CEC ;

EASTMAN, LF .

ELECTRON DEVICE LETTERS, 1980, 1 (08) :154-155