Comparison of electronic structures of doped ZnS and ZnO calculated by a first-principle pseudopotential method

被引:57
作者
Imai, Y
Watanabe, A
Shimono, I
机构
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058565, Japan
[2] Hokkaido Ind Technol Ctr, Hakodate, Hokkaido 0410801, Japan
关键词
D O I
10.1023/A:1022301907161
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electronic band calculations of doped and undoped ZnO and ZnS have been done using density functional theory under the local density approximation so as to clarify the reason of the difference in behaviors of doped ZnO and ZnS. The reason why the electrical conductivity of ZnS is difficult to be increased by doping was discussed. In the case of doped ZnS, an impurity level was generated at deep position below the bottom of the conduction band of the host ZnS lattice and Fermi level was located at this impurity level. On the contrary, the shape of the density of states curve and the band structures of doped and undoped ZnO are alike with each other and the donor band is hybridized with the conduction band of the ZnO host material. This seems to result in contribution of doped electrons to electrical current in the case of doped ZnO. (C) 2003 Kluwer Academic Publishers.
引用
收藏
页码:149 / 156
页数:8
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