Calculation of electronic energy and density of state of iron-disilicides using a total-energy pseudopotential method, CASTEP

被引:47
作者
Imai, Y [1 ]
Mukaida, M [1 ]
Tsunoda, T [1 ]
机构
[1] Natl Inst Mat & Chem Res, Dept Inorgan Mat, Tsukuba, Ibaraki 3058565, Japan
关键词
FeSi2; electronic energy; Fermi level;
D O I
10.1016/S0040-6090(00)01740-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electronic energies of alpha-, beta-, and gamma -FeSi2 were calculated so as to elucidate the possibility of the prediction of phase stability by a quantum-mechanical calculation using a total-energy pseudopotential code, CASTEP. It was properly predicted that the beta -phase is more stable than alpha- and gamma -FeSi,. The effect of the non-stoichiometry of beta -FeSi2 and doping elements (Mn, Cr, Co, and Ni) on the Fermi energy was also discussed. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:176 / 182
页数:7
相关论文
共 27 条
[1]   PHOTOCONDUCTIVITY IN N-TYPE BETA-FESI2 SINGLE-CRYSTALS [J].
ARUSHANOV, E ;
BUCHER, E ;
KLOC, C ;
KULIKOVA, O ;
KULYUK, L ;
SIMINEL, A .
PHYSICAL REVIEW B, 1995, 52 (01) :20-23
[2]   IMPURITY BAND IN P-TYPE BETA-FESI2 [J].
ARUSHANOV, E ;
KLOC, C ;
BUCHER, E .
PHYSICAL REVIEW B, 1994, 50 (04) :2653-2656
[3]   COHESIVE PROPERTIES OF IRON OBTAINED BY USE OF THE GENERALIZED GRADIENT APPROXIMATION [J].
ASADA, T ;
TERAKURA, K .
PHYSICAL REVIEW B, 1992, 46 (20) :13599-13602
[4]   INFRARED REFLECTIVITY OF SEMICONDUCTION FESI2 [J].
BIRKHOLZ, U ;
FINKENRA.H ;
NAEGELE, J ;
UHLE, N .
PHYSICA STATUS SOLIDI, 1968, 30 (01) :K81-&
[5]   ELECTRONIC PROPERTIES OF SILICON-TRANSITION METAL INTERFACE COMPOUNDS [J].
Calandra, C. ;
Bisi, O. ;
Ottaviani, G. .
SURFACE SCIENCE REPORTS, 1985, 4 (5-6) :271-364
[6]   SEMICONDUCTING SILICIDE SILICON HETEROSTRUCTURES - GROWTH, PROPERTIES AND APPLICATIONS [J].
DERRIEN, J ;
CHEVRIER, J ;
LETHANH, V ;
MAHAN, JE .
APPLIED SURFACE SCIENCE, 1992, 56-8 :382-393
[7]   DEFECT ENERGETICS IN MGO TREATED BY 1ST-PRINCIPLES METHODS [J].
DEVITA, A ;
GILLAN, MJ ;
LIN, JS ;
PAYNE, MC ;
STICH, I ;
CLARKE, LJ .
PHYSICAL REVIEW B, 1992, 46 (20) :12964-12973
[8]   ELECTRONIC-PROPERTIES OF SEMICONDUCTING FESI2 FILMS [J].
DIMITRIADIS, CA ;
WERNER, JH ;
LOGOTHETIDIS, S ;
STUTZMANN, M ;
WEBER, J ;
NESPER, R .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (04) :1726-1734
[9]  
Dusausoy P Y., 1971, ACTA CRYSTALLOGR B, V27, P1209, DOI [10.1107/S0567740871003765, DOI 10.1107/S0567740871003765]
[10]   ABINITIO BAND-STRUCTURE CALCULATION OF THE SEMICONDUCTOR BETA-FESI2 [J].
EPPENGA, R .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (06) :3027-3029