IMPURITY BAND IN P-TYPE BETA-FESI2

被引：92

作者：

ARUSHANOV, E ^{[1
]}

KLOC, C ^{[1
]}

BUCHER, E ^{[1
]}

机构：

[1] UNIV KONSTANZ,FAC PHYS,D-78434 CONSTANCE,GERMANY

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.50.2653

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results of transport measurements on p-type beta-FeSi2 single crystals in the temperature range of 30-300 K are presented and explained assuming the existence of an impurity band and an additional deep acceptor level. The values of the activation energies of the shallow and deep acceptors, their concentrations, as well as the concentration of the compensating donors and the density-of-states effective hole mass were calculated.

引用

页码：2653 / 2656

页数：4

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