ELECTRICAL-PROPERTIES OF BETA-FESI2/SI HETEROJUNCTIONS

被引：42

作者：

DIMITRIADIS, CA

机构：

[1] Department of Physics, University of Thessaloniki

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 10期

关键词：

D O I：

10.1063/1.350372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical properties of heterojunctions of polycrystalline films of beta-FeSi2 grown on n-type single-crystal silicon are investigated. The dark current-voltage and capacitance-voltage characteristics are measured over a wide temperature range. Analysis of the data reveal that multistep tunneling is the current conduction mechanism due to a high density of interface defects.

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页码：5423 / 5426

页数：4

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