EPITAXIAL-GROWTH OF FESI2 IN FE THIN-FILMS ON SI WITH A THIN INTERPOSING NI LAYER

被引：23

作者：

CHENG, HC ^{[1
]}

YEW, TR ^{[1
]}

CHEN, LJ ^{[1
]}

机构：

[1] NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN

来源：

关键词：

D O I：

10.1063/1.96237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：128 / 130

页数：3

共 14 条

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