LOCALIZED EPITAXIAL-GROWTH OF HEXAGONAL AND TETRAGONAL MOSI2 ON (111) SI

被引：28

作者：

LIN, WT ^{[1
]}

CHEN, LJ ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,CTR MAT SCI,HSINCHU,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 11期

关键词：

D O I：

10.1063/1.95760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1061 / 1063

页数：3

共 25 条

[1] ALTERNATIVE MARKER EXPERIMENT IN FORMATION OF MO AND W SILICIDES [J].

BAGLIN, J ;

DHEURLE, F ;

PETERSSON, S .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :289-290

[2] FORMATION AND STRUCTURE OF EPITAXIAL NISI2 AND COSI2 [J].

CHEN, LJ ;

MAYER, JW ;

TU, KN .

THIN SOLID FILMS, 1982, 93 (1-2) :135-141

[3] TRANSMISSION ELECTRON-MICROSCOPE STUDY OF ION-BEAM INDUCED INTERFACIAL REACTIONS IN MOLYBDENUM THIN-FILMS ON SILICON [J].

CHEN, LJ ;

HUNG, LS ;

MAYER, JW .

APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL) :202-208

[4]

CHEN MS, 1984, MOL PHARMACOL, V25, P441

[5] EPITAXIAL-GROWTH OF ZRSI2 ON SILICON WITH AN ION-BEAM MIXING ASSISTED SCHEME [J].

CHENG, HC ;

CHEN, LJ .

APPLIED PHYSICS LETTERS, 1985, 46 (06) :562-564

[6]

CHENG HC, 1985, J APPL PHYS, V57

[7]

CHENG HY, UNPUB, P5019

[8] EPITAXIAL-GROWTH OF VSI2 ON (111)SI [J].

CHIEN, CJ ;

CHENG, HC ;

NIEH, CW ;

CHEN, LJ .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :1887-1889

[9] THE EFFECT OF IMPLANTATION OF PHOSPHORUS INTO SPUTTERED MOSI2 THIN-FILMS [J].

CHOW, TP ;

GRANT, CS ;

KATZ, W ;

GILDENBLAT, G ;

REIHL, RF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) :933-938

[10] REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J].

CHOW, TP ;

STECKL, AJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1480-1497

← 1 2 3 →