THE EFFECT OF IMPLANTATION OF PHOSPHORUS INTO SPUTTERED MOSI2 THIN-FILMS

被引：10

作者：

CHOW, TP

GRANT, CS

KATZ, W

GILDENBLAT, G

REIHL, RF

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 04期

关键词：

D O I：

10.1149/1.2119861

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：933 / 938

页数：6

共 26 条

[1]

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[2]

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[4]

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[10] PHOSPHORUS-DOPED MOLYBDENUM SILICIDE FILMS FOR LSI APPLICATIONS [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (11) :2402-2410

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