PHOSPHORUS-DOPED MOLYBDENUM SILICIDE FILMS FOR LSI APPLICATIONS

[1] REFRACTORY METAL SILICON DEVICE TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1968, 11 (12) : 1105 - +

[2] CHOW K, 1979, J ELCHEM SO, V124, P113

[3] CHOW TP, 1979, TECH DIGEST IEDM, P458

[4] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 291 - 293

[5] AN MO GATE 4K STATIC MOS RAM [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1586 - 1590

[6] KOBURGER C, 1980, EL SOC EXT ABSTR, P428

[7] KONDO M, 1978, IEEE INT SOLID STATE, P158

[8] KOYANAGI M, 1979, ELECTROCHEMICAL SOC, P409

[9] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 873 - +

[10] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42

[1] REFRACTORY METAL SILICON DEVICE TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1968, 11 (12) : 1105 - +

[2] CHOW K, 1979, J ELCHEM SO, V124, P113

[3] CHOW TP, 1979, TECH DIGEST IEDM, P458

[4] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 291 - 293

[5] AN MO GATE 4K STATIC MOS RAM [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1586 - 1590

[6] KOBURGER C, 1980, EL SOC EXT ABSTR, P428

[7] KONDO M, 1978, IEEE INT SOLID STATE, P158

[8] KOYANAGI M, 1979, ELECTROCHEMICAL SOC, P409

[9] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 873 - +

[10] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42