EPITAXIAL-GROWTH OF ZRSI2 ON SILICON WITH AN ION-BEAM MIXING ASSISTED SCHEME

[1] CO2SI, CRSI2, ZRSI2 AND TISI2 FORMATION STUDIED BY A RADIOACTIVE SI-31 MARKER TECHNIQUE [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 127 - 133

[2] ION-BEAM-INDUCED SILICIDE FORMATION IN NICKEL THIN-FILMS ON SILICON [J]. THIN SOLID FILMS, 1983, 104 (1-2) : 167 - 173

[3] EFFECTS OF 2-STEP ANNEALING ON THE EPITAXIAL-GROWTH OF COSI2 ON SILICON [J]. THIN SOLID FILMS, 1983, 104 (1-2) : 183 - 189

[4] CHENG HC, 1984, MATER RES SOC S P, V25, P441

[5] CHIEN CL, J APPL PHYS

[6] REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1480 - 1497

[7] DEARNALEY G., 1973, ION IMPLANTATION

[8] ION-BEAM-INDUCED EPITAXY IN THE PD-SI SYSTEM [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 641 - 643

[9] Matthews, 1975, EPITAXIAL GROWTH, P1, DOI 10.1016/B978-0-12-480901-7.50006-8

[10] Mayer J. W., 1970, ION IMPLANTATION SEM

[1] CO2SI, CRSI2, ZRSI2 AND TISI2 FORMATION STUDIED BY A RADIOACTIVE SI-31 MARKER TECHNIQUE [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 127 - 133

[2] ION-BEAM-INDUCED SILICIDE FORMATION IN NICKEL THIN-FILMS ON SILICON [J]. THIN SOLID FILMS, 1983, 104 (1-2) : 167 - 173

[3] EFFECTS OF 2-STEP ANNEALING ON THE EPITAXIAL-GROWTH OF COSI2 ON SILICON [J]. THIN SOLID FILMS, 1983, 104 (1-2) : 183 - 189

[4] CHENG HC, 1984, MATER RES SOC S P, V25, P441

[5] CHIEN CL, J APPL PHYS

[6] REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1480 - 1497

[7] DEARNALEY G., 1973, ION IMPLANTATION

[8] ION-BEAM-INDUCED EPITAXY IN THE PD-SI SYSTEM [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 641 - 643

[9] Matthews, 1975, EPITAXIAL GROWTH, P1, DOI 10.1016/B978-0-12-480901-7.50006-8

[10] Mayer J. W., 1970, ION IMPLANTATION SEM