EFFECTS OF 2-STEP ANNEALING ON THE EPITAXIAL-GROWTH OF COSI2 ON SILICON

被引:15
作者
CHEN, LJ
CHANG, TT
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D O I
10.1016/0040-6090(83)90560-6
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T [工业技术];
学科分类号
08 ;
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页码:183 / 189
页数:7
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