REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY

[1] AKITMOTO K, 1981, APPL PHYS LETT, V39, P445, DOI 10.1063/1.92733

[2] TANTALUM SILICIDE FILMS DEPOSITED BY DC SPUTTERING [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 59 - 93

[3] INTERFACE EFFECTS IN THE FORMATION OF SILICON-OXIDE ON METAL SILICIDE LAYERS OVER SILICON SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 1849 - 1854

[4] THERMAL-OXIDATION OF NICKEL DISILICIDE [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 175 - 177

[5] BEINGLASS I, 1981, FAL EL SOC M, V81, P921

[6] BEINVOGL W, 1981, SEMICONDUCTOR SILICO, P648

[7] BENNETT RS, 1981, SPR EL SOC M, V81, P750

[8] BRORS DL, 1983, SOLID STATE TECHNOL, V26, P183

[9] SELF-REGISTERED MOLYBDENUM-GATE MOSFET [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) : 874 - +

[10] P-CHANNEL REFRACTORY METAL SELF-REGISTERED MOSFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 931 - &

[1] AKITMOTO K, 1981, APPL PHYS LETT, V39, P445, DOI 10.1063/1.92733

[2] TANTALUM SILICIDE FILMS DEPOSITED BY DC SPUTTERING [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 59 - 93

[3] INTERFACE EFFECTS IN THE FORMATION OF SILICON-OXIDE ON METAL SILICIDE LAYERS OVER SILICON SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 1849 - 1854

[4] THERMAL-OXIDATION OF NICKEL DISILICIDE [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 175 - 177

[5] BEINGLASS I, 1981, FAL EL SOC M, V81, P921

[6] BEINVOGL W, 1981, SEMICONDUCTOR SILICO, P648

[7] BENNETT RS, 1981, SPR EL SOC M, V81, P750

[8] BRORS DL, 1983, SOLID STATE TECHNOL, V26, P183

[9] SELF-REGISTERED MOLYBDENUM-GATE MOSFET [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) : 874 - +

[10] P-CHANNEL REFRACTORY METAL SELF-REGISTERED MOSFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 931 - &