REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY

[51] OXIDATION OF SPUTTERED MOLYBDENUM SILICIDE THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (09) : 826 - 827

[52] ISOBE M, 1981, IEEE ISSCC, P12

[53] THE BEHAVIOR OF BORON (ALSO ARSENIC) IN BILAYERS OF POLYCRYSTALLINE SILICON AND TUNGSTEN DISILICIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7372 - 7378

[54] KAY E, 1980, TOP CURR CHEM, V94, P1

[55] KEHR DER, 1977, 6TH P INT C CVD, P511

[56] CRYSTALLIZATION AND RESISTIVITY OF AMORPHOUS TITANIUM SILICIDE FILMS DEPOSITED BY CO-EVAPORATION [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6214 - 6219

[57] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714

[58] LEHRER WI, 1981, SEMICONDUCTOR SILICO, P588

[59] LEHRER WI, 1982, 1ST P INT S VLSI SCI, P258

[60] Leung B. C., 1980, International Electron Devices Meeting. Technical Digest, P827

[51] OXIDATION OF SPUTTERED MOLYBDENUM SILICIDE THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (09) : 826 - 827

[52] ISOBE M, 1981, IEEE ISSCC, P12

[53] THE BEHAVIOR OF BORON (ALSO ARSENIC) IN BILAYERS OF POLYCRYSTALLINE SILICON AND TUNGSTEN DISILICIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7372 - 7378

[54] KAY E, 1980, TOP CURR CHEM, V94, P1

[55] KEHR DER, 1977, 6TH P INT C CVD, P511

[56] CRYSTALLIZATION AND RESISTIVITY OF AMORPHOUS TITANIUM SILICIDE FILMS DEPOSITED BY CO-EVAPORATION [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6214 - 6219

[57] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714

[58] LEHRER WI, 1981, SEMICONDUCTOR SILICO, P588

[59] LEHRER WI, 1982, 1ST P INT S VLSI SCI, P258

[60] Leung B. C., 1980, International Electron Devices Meeting. Technical Digest, P827