REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY

被引：119

作者：

CHOW, TP ^{[1
]}

STECKL, AJ ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA

来源：

关键词：

D O I：

10.1109/T-ED.1983.21327

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1480 / 1497

页数：18

共 143 条

[41] Gargini P. A., 1981, International Electron Devices Meeting, P54
[42] GARGINI PA, 1981, FAL EL SOC M, V81, P924
[43] COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES
GEIPEL, HJ
HSIEH, N
ISHAQ, MH
KOBURGER, CW
WHITE, FR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1417 - 1424
[44] GOROWITZ B, 1982, TIS82CRD249 GEN EL R
[45] HSIEH N, 1980, SPR EL SOC M, V80, P425
[46] Hunter W. R., 1980, International Electron Devices Meeting. Technical Digest, P764
[47] Hunter W. R., 1981, IEEE Electron Device Letters, VEDL-2, P4, DOI 10.1109/EDL.1981.25319
[48] PHOSPHORUS-DOPED MOLYBDENUM SILICIDE FILMS FOR LSI APPLICATIONS
INOUE, S
TOYOKURA, N
NAKAMURA, T
ISHIKAWA, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (11) : 2402 - 2410
[49] PROPERTIES OF MOLYBDENUM SILICIDE FILM DEPOSITED BY CHEMICAL VAPOR-DEPOSITION
INOUE, S
TOYOKURA, N
NAKAMURA, T
MAEDA, M
TAKAGI, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) : 1603 - 1607
[50] INOUE S, 1981, SEMICONDUCTOR SILICO, P596