PROPERTIES OF MOLYBDENUM SILICIDE FILM DEPOSITED BY CHEMICAL VAPOR-DEPOSITION

[1] AKIMOTO K, 1981, APPL PHYS LETT, V39, P445

[2] SIZE EFFECTS IN MOSI2-GATE MOSFETS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 297 - 299

[3] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 291 - 293

[4] PHOSPHORUS-DOPED MOLYBDENUM SILICIDE FILMS FOR LSI APPLICATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (11) : 2402 - 2410

[5] INOUE S, 1981, SEMICONDUCTOR SILICO, P596

[6] KEHR DER, 1977, 6TH P INT C CVD, P511

[7] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42

[8] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1409 - 1417

[9] SARASWAT KC, 1980, ELECTROCHEMICAL SOC, V801, P419

[10] YAMIN M, 1966, IEEE T ELECTRON DEVI, V13, P79

[1] AKIMOTO K, 1981, APPL PHYS LETT, V39, P445

[2] SIZE EFFECTS IN MOSI2-GATE MOSFETS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 297 - 299

[3] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 291 - 293

[4] PHOSPHORUS-DOPED MOLYBDENUM SILICIDE FILMS FOR LSI APPLICATIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (11) : 2402 - 2410

[5] INOUE S, 1981, SEMICONDUCTOR SILICO, P596

[6] KEHR DER, 1977, 6TH P INT C CVD, P511

[7] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42

[8] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1409 - 1417

[9] SARASWAT KC, 1980, ELECTROCHEMICAL SOC, V801, P419

[10] YAMIN M, 1966, IEEE T ELECTRON DEVI, V13, P79