EPITAXIAL-GROWTH OF VSI2 ON (111)SI

被引：22

作者：

CHIEN, CJ ^{[1
]}

CHENG, HC ^{[1
]}

NIEH, CW ^{[1
]}

CHEN, LJ ^{[1
]}

机构：

[1] NATL TSINGHUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 06期

关键词：

D O I：

10.1063/1.334420

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1887 / 1889

页数：3

共 18 条

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[4]

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[5]

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[7] ORIENTED GROWTH OF INTERFACIAL PTSI LAYER OR BETWEEN PT AND SI [J].

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[8] KINETICS OF SILICIDE FORMATION BY THIN-FILMS OF V ON SI AND SIO2 SUBSTRATES [J].

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[9]

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[10]

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