Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region

被引：8

作者：

Yeh, NT ^{[1
]}

Lee, JM ^{[1
]}

Nee, TE ^{[1
]}

Chyi, JI ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 09期

关键词：

quantum dots; semiconductor lasers;

D O I：

10.1109/68.874209

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-assembled In0.5Ga0.5As quantum-dot lasers with different doping schemes in the active region are investigated, Their lasing wavelength, characteristic temperature, quantum efficiency, and internal loss are characterized and correlated with the size, uniformity, and density of the quantum dots as revealed by atomic force microscopy, Continuous-wave operation of Be-doped quantum-dot lasers has been achieved. Undoped In0.5Ga0.5As quantum-dot lasers with a characteristic temperature as high as 125K above room temperature have also been demonstrated.

引用

页码：1123 / 1125

页数：3

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