The epitaxial growth of wurtzite ZnO films on LiNbO3 (0001) substrates

被引：32

作者：

Yin, J ^{[1
]}

Liu, ZG ^{[1
]}

Liu, H ^{[1
]}

Wang, XS ^{[1
]}

Zhu, T ^{[1
]}

Liu, JM ^{[1
]}

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 220卷 / 03期

基金：

美国国家科学基金会;

关键词：

ZnO thin films; epitaxial growth; pulsed laser deposition;

D O I：

10.1016/S0022-0248(00)00861-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnO epitaxial films were deposited on LiNbO3 (0 0 0 1) substrates by pulsed laser deposition. The smaller lattice misfit ( - 8.5%) between ZnO along [1 0 (1) over bar 0] - direction and LiNbO3 (0 0 0 1) along [1 1 (2) over bar 0] - direction, as compared with that in the case of normally used sapphire (0001) substrates, favored the epitaxial growth of ZnO films. The transmittance spectra of ZnO films deposited in vacuum after annealed in pure oxygen show a sharp absorption edge at 375.6 nm (E-g = 3.31 eV). (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：281 / 285

页数：5

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