FET characteristics of dinaphthothienothiophene (DNTT) on Si/SiO2 substrates with various surface-modifications

被引：46

作者：

Yamamoto, Tatsuya ^{[1
]}

Takimiya, Kazuo ^{[1
]}

机构：

[1] Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashi Ku, Hiroshima 7398527, Japan

来源：

JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2007年 / 20卷 / 01期

关键词：

organic field-effect transistor; OTS; naphthalene; thienothiophene;

D O I：

10.2494/photopolymer.20.57

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Field-effect transistors (FETs) consisting of vapor-deposited thin-film of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) as an active layer on silanized Si/SiO2 substrates were fabricated and evaluated. Depending on the length of alkyl groups in silanization reagents, FET characteristics of the devices were affected: with octadecyltrichlorosilane (C-18-OTS), devices showing superior FET characteristics up to FET mobility of 3.1 cm(2) V-1 s(-1) were obtained.

引用

页码：57 / 59

页数：3

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