ZrB2 substrate for nitride semiconductors

被引：22

作者：

Kinoshita, H

Otani, S

Kamiyama, S

Amano, H

Akasaki, I

Suda, J

Matsunami, H

机构：

[1] Kyocera Corp, Youkaichi Plant, Shiga 5278555, Japan

[2] Kyoto Univ, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan

[3] Meijo Univ, High Tech Res Ctr, Fac Sci & Tech, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[4] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 4B期

关键词：

GaN; lattice-matched substrate; ZrB2; floating zone; cleavage;

D O I：

10.1143/JJAP.42.2260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zirconium diboride (ZrB2) has excellent properties as an electrically conductive substrate for nitride semiconductors. In this paper, the bulk growth of ZrB2 by a floating-zone method and some properties of ZrB2, together with a brief summary of heteroepitaxial growth of gallium nitride (GaN) by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE), are presented. By optimizing the bulk growth conditions, a 20-mm-diameter ZrB2 single crystal was obtained. The cleavage direction of the ZrB2 (0001) substrate was confirmed to be parallel to [1 1(2) over bar 0], which is parallel to that of GaN (0001). Epitaxial growth by both MBE and MOVPE was demonstrated. The grown n-type GaN/ZrB2 structure exhibited ohmic-like current-voltage behavior. These results indicate that ZrB2 has potential for application to the substrate for nitride semiconductors.

引用

页码：2260 / 2264

页数：5

共 7 条

[1] Zirconium diboride (0001) as an electrically conductive lattice-matched substrate for gallium nitride [J].