Observation of spectral hole burning in photocurrent spectrum of InAs self-assembled quantum dots embedded in pin diode

被引：14

作者：

Sugiyama, Y

Nakata, Y

Muto, S

Horiguchi, N

Futatsugi, T

Awano, Y

Yokoyama, N

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 24301, Japan

[2] Hokkaido Univ, Fac Engn, Kita Ku, Sapporo, Hokkaido 060, Japan

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 19期

关键词：

semiconductor quantum dots; photoconductivity;

D O I：

10.1049/el:19971096

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The spectral hole burning of InAs self-assembled quantum dots (QDs) embedded in a pin diode has been observed for the first time. The spectral hole depth increases as the electric field is increased. By numerical fitting to experimental results, the possibility of wavelength-domain multiplicity in optical memory by using InAs QDs is shown.

引用

页码：1655 / 1657

页数：3

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