Structural analysis of cubic GaN through X-ray pole figure generation

被引：35

作者：

Balakrishnan, K

Feuillet, G

Ohta, K

Hamaguchi, H

Okumura, H

Yoshida, S

机构：

[1] SHIBAURA INST TECHNOL,MINATO KU,TOKYO 108,JAPAN

[2] SCI UNIV TOKYO,NODA,CHIBA 278,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 10期

关键词：

GaN; X-ray diffraction; pole figure; secondary hexagonal phase;

D O I：

10.1143/JJAP.36.6221

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epilayers of cubic GaN have been grown on (001) GaAs substrates by molecular beam epitaxy using an electron cyclotron resonance (ECR) plasma nitrogen source. In order to study the existence of secondary crystallographic phases in the GaN epilayers; X-ray pole figures were generated on the (001) surfaces of the samples. The exact locations of misoriented cubic and secondary hexagonal phases have been identified and their relative intensities were estimated. The X-ray pole figure technique has been proven to be extremely useful for the structural characterization of cubic GaN epilayers.

引用

页码：6221 / 6225

页数：5

共 13 条

[1]

[Anonymous], XRAY DIFFRACTION

[2] HOT-ELECTRON MICROWAVE CONDUCTIVITY OF WIDE BANDGAP SEMICONDUCTORS [J].

DAS, P ;

FERRY, DK .

SOLID-STATE ELECTRONICS, 1976, 19 (10) :851-855

[3] TRANSMISSION ELECTRON-MICROSCOPE OBSERVATION OF CUBIC GAN GROWN BY METALORGANIC VAPOR-PHASE EPITAXY WITH DIMETHYLHYDRAZINE ON (001) GAAS [J].

KUWANO, N ;

NAGATOMO, Y ;

KOBAYASHI, K ;

OKI, K ;

MIYOSHI, S ;

YAGUCHI, H ;

ONABE, K ;

SHIRAKI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A) :18-22

[4]

MOHAMMAD SN, 1995, P IEEE, V83, P1305

[5] Growth and characterization of cubic GaN [J].

Okumura, H ;

Ohta, K ;

Feuillet, G ;

Balakrishnan, K ;

Chichibu, S ;

Hamaguchi, H ;

Hacke, P ;

Yoshida, S .

JOURNAL OF CRYSTAL GROWTH, 1997, 178 (1-2) :113-133

[6] EPITAXIAL-GROWTH OF CUBIC AND HEXAGONAL GAN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY USING A MICROWAVE PLASMA NITROGEN-SOURCE [J].

OKUMURA, H ;

MISAWA, S ;

OKAHISA, T ;

YOSHIDA, S .

JOURNAL OF CRYSTAL GROWTH, 1994, 136 (1-4) :361-365

[7]

SAKAI A, 1996, P 15 EL MAT S EMS 96, P69

[8] GAN, AIN, AND INN - A REVIEW [J].

STRITE, S ;

MORKOC, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1237-1266

[9] Cubic dominant GaN growth on (001)GaAs substrates by hydride vapor phase epitaxy [J].

Tsuchiya, H ;

Sunaba, K ;

Yonemura, S ;

Suemasu, T ;

Hasegawa, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (1AB) :L1-L3

[10]

Warren B. E., 1969, X-Ray Diffraction

← 1 2 →