Overlay performance in advanced processes

被引：21

作者：

Bornebroek, F ^{[1
]}

Burghoorn, J ^{[1
]}

Greeneich, JS ^{[1
]}

Megens, HJ ^{[1
]}

Satriasaputra, D ^{[1
]}

Simons, G ^{[1
]}

Stalnaker, S ^{[1
]}

Koek, B ^{[1
]}

机构：

[1] ASML, NL-5503 LA Veldhoven, Netherlands

来源：

OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2 | 2000年 / 4000卷

关键词：

overlay; alignment systems; W-CMP; wafer processing;

D O I：

10.1117/12.389040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To guarantee less than 45 nm product overlay required for the 130 nm TC technology node a key component in lithographic tools is a sophisticated wafer alignment sensor that is able to deal with the influences of new, advanced IC processing. To prove that product overlay performance in this range is achievable, overlay results are presented that confirm the operational concept of the new ATHENA alignment sensor on various advanced processes in both front-end as well as back-end-of-line. In particular, the influences related to Chemical Mechanical Polishing (CMP) have been studied. The robustness of the system to large variations of W-CMP process parameters is highlighted. It is argued that full exploitation of the flexibility of the sensor will allow further optimization of its operation in actual production environments and that a product overlay of 35 nm is feasible.

引用

页码：520 / 531

页数：12