Epitaxial BiFeO3 multiferroic thin film heterostructures

被引:5545
作者
Wang, J
Neaton, JB
Zheng, H
Nagarajan, V
Ogale, SB
Liu, B
Viehland, D
Vaithyanathan, V
Schlom, DG
Waghmare, UV
Spaldin, NA
Rabe, KM
Wuttig, M
Ramesh, R [1 ]
机构
[1] Univ Maryland, Dept Phys, College Pk, MD 20742 USA
[2] Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA
[3] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
[4] Virginia Polytech Inst & State Univ, Dept Mat Sci & Engn, Blacksburg, VA 24061 USA
[5] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[6] Jawaharlal Nehru Ctr Adv Sci Res, Bangalore 560064, Karnataka, India
[7] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 94805 USA
关键词
D O I
10.1126/science.1080615
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Enhancement of polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3, is reported. Structure analysis indicates that the crystal structure of film is monoclinic in contrast to bulk, which is rhombohedral. The films display a room-temperature spontaneous polarization (50 to 60 microcoulombs per square centimeter) almost an order of magnitude higher than that of the bulk (6.1 microcoulombs per square centimeter). The observed enhancement is corroborated by first-principles calculations and found to originate from a high sensitivity of the polarization to small changes in lattice parameters. The films also exhibit enhanced thickness-dependent magnetism compared with the bulk. These enhanced and combined functional responses in thin film form present an opportunity to create and implement thin film devices that actively couple the magnetic and ferroelectric order parameters.
引用
收藏
页码:1719 / 1722
页数:4
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