A structure zone diagram including plasma-based deposition and ion etching

被引：705

作者：

Anders, Andre ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 15期

关键词：

Structure zone diagram; Thin film deposition; Plasma assistance; Ion etching; Stress; Morphology; Homologous temperature; Potential and kinetic energy; MAGNETRON SPUTTER-DEPOSITION; PHYSICAL VAPOR-DEPOSITION; ENERGETIC CONDENSATION; THIN-FILMS; ORIENTATION; COATINGS; MODEL;

D O I：

10.1016/j.tsf.2009.10.145

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An extended structure zone diagram is proposed that includes energetic deposition, characterized by a large flux of ions typical for deposition by filtered cathodic arcs and high power impulse magnetron sputtering. The axes are comprised of a generalized homologous temperature, the normalized kinetic energy flux, and the net film thickness, which can be negative due to ion etching. It is stressed that the number of primary physical parameters affecting growth by far exceeds the number of available axes in such a diagram and therefore it can only provide an approximate and simplified illustration of the growth condition-structure relationships. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：4087 / 4090

页数：4

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