Native defect identification in II-VI materials

被引：68

作者：

Meyer, BK

Stadler, W

机构：

[1] TU München, Physik-Department, E16

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 161卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00620-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We will review the current status of the native defect properties in II-VI compound semiconductors. Based on electron paramagnetic resonance, optically detected magnetic resonance, photoluminescence and positron annihilation spectroscopy the intrinsic defects and complexes of them in CdTe and ZnTe are identified. Quantitative estimates are given. We compare their magnetic resonance properties as well as energy level positions in the various II-VI compounds to show similar chemical trends for all major intrinsic defects.

引用

页码：119 / 127

页数：9

共 69 条

[1] BINDING-ENERGY OF AN ELECTRON TO A 3-DEFECT-COMPLEX IN CDTE [J].

BELL, RO .

SOLID STATE COMMUNICATIONS, 1975, 16 (07) :913-916

[2]

BHARGAWA RN, 1982, J CRYST GROWTH, V72, P194

[3]

BIERNACKI S, 1982, PHYS REV B, V48

[4]

BITTEBIERRE J, 1986, PHYS REV B, V34, P2360, DOI 10.1103/PhysRevB.34.2360

[5] IDENTIFICATION OF CU-ACCEPTOR AND AG-ACCEPTOR IN CDTE [J].

CHAMONAL, JP ;

MOLVA, E ;

PAUTRAT, JL .

SOLID STATE COMMUNICATIONS, 1982, 43 (11) :801-805

[6]

DEVLIN SS, 1967, PHYSICS CHEM 2 6 COM, P551

[7] AN ESR ANALYSIS OF THERMALLY ACTIVATED MOTIONAL EFFECTS IN THE ZNS-A-CENTERS [J].

DISCHLER, B ;

RAUBER, A ;

SCHNEIDER, J .

PHYSICA STATUS SOLIDI, 1964, 6 (02) :507-510

[8] IDENTIFICATION OF THE CADMIUM VACANCY IN CDTE BY ELECTRON-PARAMAGNETIC-RESONANCE [J].

EMANUELSSON, P ;

OMLING, P ;

MEYER, BK ;

WIENECKE, M ;

SCHENK, M .

PHYSICAL REVIEW B, 1993, 47 (23) :15578-15580

[9] POSITRON TRAPPING IN VACANCIES IN INDIUM DOPED CDTE CRYSTALS [J].

GELYSYKES, C ;

CORBEL, C ;

TRIBOULET, R .

SOLID STATE COMMUNICATIONS, 1991, 80 (01) :79-83

[10]

GORN IA, 1990, SOV PHYS SEMICOND+, V24, P336

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