Dosage modeling for deep x-ray lithography application

被引：3

作者：

Shih, WP ^{[1
]}

Hwang, GJ

Shew, BY

Cheng, Y

机构：

[1] Natl Tsing Hua Univ, Dept Power Mech Engn, Hsinchu, Taiwan

[2] Synchrotron Radiat Res Ctr, Hsinchu, Taiwan

来源：

MICROSYSTEM TECHNOLOGIES | 1998年 / 4卷 / 02期

关键词：

Multiple Exposure; Exposure Parameter; Dosage Model; Exposure Process; Analytical Dosage;

D O I：

10.1007/s005420050101

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A analytical dosage model was established to study exposure parameters of deep x-ray lithography systematically. It provided a reasonable guild line for deciding exposure parameters, selecting masks and filters in radiating process, Calculated results showed a good agreement with experiment results. Both of the single and multiple exposure processes were investigated In present study.

引用

页码：82 / 85

页数：4

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