Real time observation of surface kinetics during the self-assembly of Ga chains on Si(112)

被引：12

作者：

Glembocki, OJ

Prokes, SM

机构：

[1] Naval Research Laboratory, Washington

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 16期

关键词：

D O I：

10.1063/1.120428

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single wavelength reflectance difference anisotropy (RDA) has been used to study the kinetics of the self-assembly of Ga atom chains on faceted Si(ll) surfaces. The formation of the chains is followed from the initial deposition through changes in the surface reconstruction from (5x1) to (6x1). We present a simple Monte Carlo model to account for the time evolution of the RDA signal as a function of temperature and experimentally determined kinetic parameters. (C) 1997 American Institute of Physics.

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页码：2355 / 2357

页数：3

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