An integrated pyroelectric infrared sensor with a PZT thin film

被引：46

作者：

Chang, CC ^{[1
]}

Tang, CS ^{[1
]}

机构：

[1] Natl Taiwan Ocean Univ, Dept Elect Engn, Keelung, Taiwan

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1998年 / 65卷 / 2-3期

关键词：

pyroelectric; lead zirconate titanate (PZT); infrared sensors; JFET; thin films; voltage sensitivity; specific detectivity;

D O I：

10.1016/S0924-4247(97)01663-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper integrated pyroelectric infrared sensors have been made by combining a (Pb(Zr52Ti48)O-3, PZT) thin film with an Si JFET. The JFET is used to read out the pyroelectrically generated signal. The relevant sensor parameters, voltage sensitivity and specific detectivity, are measured within a modulation frequency range from 0.2 to 10 Hz. With a 500 mu m thick silicon substrate, the voltage sensitivity is R-V = 191 V W-1 and the maximum specific detectivity is D* = 2x10(7) cm Hz(1/2) W-1 at a modulation frequency of 1 Hz. (C) 1998 Elsevier Science S.A.

引用

页码：171 / 174

页数：4

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