PYROELECTRIC INFRARED IMAGE SENSORS USING SI CCD AND FET ARRAYS

被引：4

作者：

TOGAMI, Y ^{[1
]}

OKUYAMA, M ^{[1
]}

HAMAKAWA, Y ^{[1
]}

KIMATA, M ^{[1
]}

DENDA, M ^{[1
]}

机构：

[1] MITSUBISHI ELECTR CORP,LSI RES & DEV LAB,ITAMI,HYOGO 664,JAPAN

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1994年 / 40卷 / 02期

关键词：

D O I：

10.1016/0924-4247(94)85014-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two types of infrared image sensors have been developed by combining a pyroelectric plate with an Si FET array and an Si CCD, respectively. One is an image sensor in which a pyroelectric LiTaO3 plate is bonded to an Si FET array of 64 x 64 elements by indium bumps. The other is an LiTaO3 or PZT plate connected to an Si CCD of 64 x 32 elements by a dielectric connector. The infrared-induced charge in the pyroelectric plate and the change in the Si surface potential are analysed by solving heat conduction and circuit equations in the sensitive region of the multilayered device construction. The basic characteristics of the fabricated image sensor have been obtained. The pyroelectric sensitive region in the CCD image sensor has been clarified for several combinations of pyroelectric and dielectric materials. The optimum device structure is discussed by considering the infrared sensitivity, the signal scattering of each pixel and the stability.

引用

页码：111 / 116

页数：6

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