10-MU-M GAAS ALGAAS MULTIQUANTUM WELL SCANNED ARRAY INFRARED IMAGING CAMERA

被引:79
作者
BETHEA, CG
LEVINE, BF
SHEN, VO
ABBOTT, RR
HSEIH, SJ
机构
[1] AT&T Bell Laboratories, Murray Hill
关键词
D O I
10.1109/16.78387
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A long-wavelength (lambda-c = 10.7-mu-m) infrared imaging camera that uses a GaAs/Al(x)Ga(1-x)As quantum well infrared photodetector (QWIP) array is demonstrated. Excellent pixel uniformity (2%) and noise equivalent temperature difference sensitivity (NE-DELTA-T < 0.1-degrees-C) has been achieved. Since GaAs has a more mature growth and processing technology as well as higher uniformity than HgCdTe, it shows great promise for the fabrication of large two-dimensional arrays.
引用
收藏
页码:1118 / 1123
页数:6
相关论文
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