PHOTOVOLTAIC QUANTUM WELL INFRARED DETECTOR

被引：53

作者：

GOOSSEN, KW ^{[1
]}

LYON, SA ^{[1
]}

ALAVI, K ^{[1
]}

机构：

[1] SIEMENS RES & TECHNOL LABS,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 20期

关键词：

D O I：

10.1063/1.99022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1701 / 1703

页数：3

共 14 条

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[8] NEW 10 MU-M INFRARED DETECTOR USING INTERSUBBAND ABSORPTION IN RESONANT TUNNELING GAALAS SUPERLATTICES [J].

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[9] ONE ATOMIC LAYER HETEROINTERFACE FLUCTUATIONS IN GAAS-ALAS QUANTUM WELL STRUCTURES AND THEIR SUPPRESSION BY INSERTION OF SMOOTHING PERIOD IN MOLECULAR-BEAM EPITAXY [J].

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[10] INTERSUBBAND RELAXATION IN GAAS-ALXGA1-XAS QUANTUM-WELL STRUCTURES OBSERVED DIRECTLY BY AN INFRARED BLEACHING TECHNIQUE [J].

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