Electroluminescence properties of light emitting devices based on silicon nanocrystals

被引：49

作者：

Irrera, A

Pacifici, D

Miritello, M

Franzo, G

Priolo, F

Iacona, F

Sanfilippo, D

Di Stefano, G

Fallica, PG

机构：

[1] CNR, IMM, Sez Catania, I-95121 Catania, Italy

[2] Univ Catania, INFM, I-95129 Catania, Italy

[3] Univ Catania, Dipartimento Fis & Astron, I-95129 Catania, Italy

[4] STMicroelect, I-95121 Catania, Italy

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 16卷 / 3-4期

关键词：

Si nanocrystals; electroluminescence; optoelectronic devices;

D O I：

10.1016/S1386-9477(02)00609-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have fabricated MOS devices where the dielectric layer consists of a substoichiometric SiQ(x) (x < 2) thin film, annealed at 1100degreesC for I h to induce the separation of the Si and SiO2 phases, with the formation of silicon nanocrystals (nc) embedded in the insulating matrix. We have studied the electroluminescence (EL) properties of such devices as a function of the current density and of the temperature. We have evaluated the excitation cross section of Si nc under electrical pumping at room temperature and at low temperature (12 K). Moreover, we have used the experimental EL intensities and decay times to evaluate the radiative rate as a function of the temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：395 / 399

页数：5

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