High-resolution X-ray diffraction investigation of crystal perfection and relaxation of GaAs/InGaAs/GaAs quantum wells depending on MOVPE growth conditions

被引：5

作者：

Zeimer, U ^{[1
]}

Bugge, F ^{[1
]}

Gramlich, S ^{[1
]}

Urban, I ^{[1
]}

Oster, A ^{[1
]}

Weyers, M ^{[1
]}

机构：

[1] BUNDESANSTALT MAT FORSCH & PRUFUNG,D-12205 BERLIN,GERMANY

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS | 1997年 / 19卷 / 2-4期

关键词：

D O I：

10.1007/BF03040995

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The influence of growth conditions and the concentration of indium in the vapour phase on the crystal perfection of strained InGaAs/GaAs quantum wells grown by metalorganic vapour phase epitaxy is studied by high-resolution X-ray diffraction, cathodoluminescence, photoluminescence and transmission electron microscopy. A strong dependence of the misfit dislocation density on the growth temperature is found. With increasing In concentration in the vapour phase a transition to the 3-dimensional growth mode leading to a different type of defect formation is observed.

引用

页码：369 / 376

页数：8

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