TEMPERATURE-DEPENDENT TRANSITION FROM 2-DIMENSIONAL TO 3-DIMENSIONAL GROWTH IN HIGHLY STRAINED INXGA1-XAS/GAAS (0.36-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) SINGLE QUANTUM-WELLS

被引：45

作者：

WANG, SM

ANDERSSON, TG

EKENSTEDT, MJ

机构：

[1] Department of Physics, Chalmers University of Technology

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 26期

关键词：

D O I：

10.1063/1.107986

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transition from two-dimensional to three-dimensional growth mode has been investigated by photoluminescence in highly strained InxGa1-xAs/GaAs (0.36 less-than-or-equal-to x less-than-or-equal-to 1) single quantum wells. The structures were grown by molecular beam epitaxy from 410 to 590-degrees-C. The critical layer thickness based on this transition decreased as the growth temperature increased. This behavior was well described by the single-kink Matthews model [J. Vac. Sci. Technol. 12, 126 (1975)] including the simplest expression of the Peierls-Nabarro friction stress [J. Appl. Phys. 41, 3800 (1970)].

引用

页码：3139 / 3141

页数：3

共 14 条

[1] VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].