RELAXATION AND RECOVERY OF HIGHLY STRAINED INGAAS/GAAS QUANTUM WELLS

[1] ROLE OF STRAIN AND GROWTH-CONDITIONS ON THE GROWTH FRONT PROFILE OF INXGA1-XAS ON GAAS DURING THE PSEUDOMORPHIC GROWTH REGIME [J]. APPLIED PHYSICS LETTERS, 1988, 53 (08) : 684 - 686

[2] THE EFFECT OF LATTICE MISMATCH ON THE DYNAMIC MICROSTRUCTURE OF III-V COMPOUND SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 2007 - 2010

[3] INTERMIXING AT INAS/GAAS AND GAAS/INAS INTERFACES [J]. SURFACE SCIENCE, 1987, 189 : 1041 - 1046

[4] SURFACE SEGREGATION OF 3RD-COLUMN ATOMS IN III-V TERNARY ARSENIDES [J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 35 - 37

[5] STABILITY OF SEMICONDUCTOR STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 56 - 58

[6] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATION STUDY OF INGAAS AND INALAS ON INP - APPLICATION TO PSEUDOMORPHIC HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (15) : 1173 - 1175

[7] EXPERIMENTAL-EVIDENCE OF DIFFERENCE IN SURFACE AND BULK COMPOSITIONS OF ALXGA1-XAS, ALXIN1-XAS AND GAXIN1-XAS EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 80 (02) : 307 - 314

[8] DEFECTS ASSOCIATED WITH ACCOMMODATION OF MISFIT BETWEEN CRYSTALS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 126 - 133

[9] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[10] MESMER C, 1981, J APPL PHYS, V52, P4623

[1] ROLE OF STRAIN AND GROWTH-CONDITIONS ON THE GROWTH FRONT PROFILE OF INXGA1-XAS ON GAAS DURING THE PSEUDOMORPHIC GROWTH REGIME [J]. APPLIED PHYSICS LETTERS, 1988, 53 (08) : 684 - 686

[2] THE EFFECT OF LATTICE MISMATCH ON THE DYNAMIC MICROSTRUCTURE OF III-V COMPOUND SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 2007 - 2010

[3] INTERMIXING AT INAS/GAAS AND GAAS/INAS INTERFACES [J]. SURFACE SCIENCE, 1987, 189 : 1041 - 1046

[4] SURFACE SEGREGATION OF 3RD-COLUMN ATOMS IN III-V TERNARY ARSENIDES [J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 35 - 37

[5] STABILITY OF SEMICONDUCTOR STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 56 - 58

[6] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATION STUDY OF INGAAS AND INALAS ON INP - APPLICATION TO PSEUDOMORPHIC HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (15) : 1173 - 1175

[7] EXPERIMENTAL-EVIDENCE OF DIFFERENCE IN SURFACE AND BULK COMPOSITIONS OF ALXGA1-XAS, ALXIN1-XAS AND GAXIN1-XAS EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 80 (02) : 307 - 314

[8] DEFECTS ASSOCIATED WITH ACCOMMODATION OF MISFIT BETWEEN CRYSTALS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 126 - 133

[9] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[10] MESMER C, 1981, J APPL PHYS, V52, P4623