THE EFFECT OF LATTICE MISMATCH ON THE DYNAMIC MICROSTRUCTURE OF III-V COMPOUND SURFACES

被引：30

作者：

EBNER, JT

ARTHUR, JR

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574904

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2007 / 2010

页数：4

共 11 条

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[4] MOLECULAR-BEAM EPITAXIAL-GROWTH AND OPTICAL-PROPERTIES OF GA0.47IN0.53AS AL0.48IN0.52AS ON INP AND GA1-XINXAS/GAAS ON GAAS QUANTUM WELLS
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[5] MODELING OF DOPANT INCORPORATION, SEGREGATION, AND ION SURFACE INTERACTION EFFECTS DURING SEMICONDUCTOR FILM GROWTH BY MOLECULAR-BEAM EPITAXY AND PLASMA-BASED TECHNIQUES
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[6] MEASUREMENT OF HIGH ELECTRON-DRIFT VELOCITY IN A SUB-MICRON, HEAVILY DOPED GRADED GAP ALXGA1-XAS LAYER
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[7] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2
[8] CALCULATION OF CRITICAL LAYER THICKNESS VERSUS LATTICE MISMATCH FOR GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES
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[9] SURFACE SEGREGATION MODEL FOR SN-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 7085 - 7087
[10] CRYSTAL INTERFACES .1. SEMI-INFINITE CRYSTALS
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