SURFACE SEGREGATION OF 3RD-COLUMN ATOMS IN III-V TERNARY ARSENIDES

被引：23

作者：

HOUZAY, F

MOISON, JM

GUILLE, C

BARTHE, F

VANROMPAY, M

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90345-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：35 / 37

页数：3

相关论文

共 7 条

[1] EFFECT OF TEMPERATURE ON THE GE/GAAS(110) INTERFACE FORMATION
CHEN, P
BOLMONT, D
SEBENNE, CA
[J]. SURFACE SCIENCE, 1983, 132 (1-3) : 505 - 512
[2] PHOTOEMISSION-STUDIES OF ALXGA1-XAS(100) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY
CHIANG, TC
LUDEKE, R
EASTMAN, DE
[J]. PHYSICAL REVIEW B, 1982, 25 (10): : 6518 - 6521
[3] INTERMIXING AT INAS/GAAS AND GAAS/INAS INTERFACES
GUILLE, C
HOUZAY, F
MOISON, JM
BARTHE, F
[J]. SURFACE SCIENCE, 1987, 189 : 1041 - 1046
[4] GUILLE C, 1988, IOP C P, V91, P327
[5] EXPERIMENTAL-EVIDENCE OF DIFFERENCE IN SURFACE AND BULK COMPOSITIONS OF ALXGA1-XAS, ALXIN1-XAS AND GAXIN1-XAS EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
MASSIES, J
TURCO, F
SALETES, A
CONTOUR, JP
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 80 (02) : 307 - 314
[6] MOISON JM, IN PRESS
[7] MORPHOLOGY OF GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
STALL, RA
ZILKO, J
SWAMINATHAN, V
SCHUMAKER, N
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 524 - 527