Formation of high aspect ratio macropore array on p-type silicon

被引：51

作者：

Chao, KJ ^{[1
]}

Kao, SC ^{[1
]}

Yang, CM ^{[1
]}

Hseu, MS ^{[1
]}

Tsai, TG ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Chem, Hsinchu, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2000年 / 3卷 / 10期

关键词：

D O I：

10.1149/1.1391188

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The fabrication of high aspect ratio macropore arrays on p-type silicon under optimum anodization conditions is demonstrated. The depth of the macropore can reach 400 mu m with an aspect ratio of 100. The thickness of the pore wall is 1-2 mu m. Presence of cationic surfactant in the electrolyte protects the pore walls and promotes the growth of the unidirectional macropores. The shape of pre-etched pits is critical for the formation of high aspect ratio macropores on p-type silicon. A self-supported silicon membrane of straight-through macroporous channels has also been obtained. (C) 2000 The Electrochemical Society. S1099-0062(00)05-011-2. All rights reserved.

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页码：489 / 492

页数：4

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