Seed-free growth of (111) oriented CdTe and CdZnTe crystals by solid-state recrystallization

被引:13
作者
Hassani, S [1 ]
Lusson, A [1 ]
Tromson-Carli, A [1 ]
Triboulet, R [1 ]
机构
[1] CNRS, Lab Phys Solides & Cristallogenese, F-92195 Meudon, France
关键词
electron backscattering diffraction; solid-state recrystallization; cadmium telluride;
D O I
10.1016/S0022-0248(02)02114-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Solid-state recrystallization (SSR) is proposed as a novel method of CdTe bulk crystal growth which allows one to overcome the difficulties met in the growth of the compound which result from the ionic character of the Cd-Te chemical bond. A three-step strategy for CdTe SSR growth is described where the production of CdTe provides a source for the subsequent growth by sublimation of polycrystalline boules which are finally submitted to SSR. The material obtained after each step is characterized electrically, optically and chemically. Large CdTe crystals showing good structural properties have been obtained from this SSR technique, which is demonstrated to be also convenient for the growth of CdZnTe crystals. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:121 / 127
页数:7
相关论文
共 25 条
[1]   EPITAXIC GROWTH OF COMPOUNDS II-VI IN VAPOR-PHASE [J].
BLANCONNIER, P ;
HENOC, P .
JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :218-+
[2]   BRIDGMAN GROWTH AND ASSESSMENT OF CDTE AND CDZNTE USING THE ACCELERATED CRUCIBLE ROTATION TECHNIQUE [J].
CAPPER, P ;
HARRIS, JE ;
OKEEFE, E ;
JONES, CL ;
ARD, CK ;
MACKETT, P ;
DUTTON, D .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 16 (1-3) :29-39
[3]  
Faktor M.M., 1974, GROWTH CRYSTALS VAPO
[4]  
Glazov V.M., 1969, LIQUID SEMICONDUCTOR
[5]   SURFACE-MORPHOLOGY OF VAPOR-PHASE GROWN CDTE [J].
GRASZA, K ;
SCHWARZ, R ;
LAASCH, M ;
BENZ, KW ;
PAWLOWSKA, M .
JOURNAL OF CRYSTAL GROWTH, 1995, 151 (3-4) :261-266
[6]   P-T-X phase equilibrium and vapor pressure scanning of non-stoichiometry in CdTe [J].
Greenberg, JH .
JOURNAL OF CRYSTAL GROWTH, 1996, 161 (1-4) :1-11
[7]  
Ladeira LO, 1997, CENTRIFUGAL MATERIALS PROCESSING, P133
[8]  
LARSON DJ, 1994, NASA C PUBLICATION, V3272, P129
[9]   Low resistive ZnSe substrates [J].
Lemasson, P ;
Rivière, A ;
Didier, G ;
Tromson-Carli, A ;
Triboulet, R .
JOURNAL OF CRYSTAL GROWTH, 1999, 197 (03) :462-465
[10]  
LEMASSON P, IN PRESS