Low resistive ZnSe substrates

被引：6

作者：

Lemasson, P ^{[1
]}

Rivière, A ^{[1
]}

Didier, G ^{[1
]}

Tromson-Carli, A ^{[1
]}

Triboulet, R ^{[1
]}

机构：

[1] CNRS, Lab Phys Solides Bellevue, F-92195 Meudon, France

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 197卷 / 03期

关键词：

Hall effect measurements; ZnSe crystals; electron channelling patterns (ECP); cathodoluminescence (CL);

D O I：

10.1016/S0022-0248(98)00744-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Doping by annealing of ZnSe single crystals grown by solid phase recrystallisation in a mixture of Al and Zn at 860 degrees C has been studied. The properties of doped ZnSe crystals assessed by secondary ions mass spectroscopy, scanning electron microscopy (electron channelling patterns (ECP) and cathodoluminescence (CL)), double crystal X-ray diffraction (rocking curve) and Wall effect measurements depend strongly on the geometry of the crystal which is annealed. In the best case, CL spectra show only the donor-bound exciton line (2.67 eV at 300 K; 2.77 eV at 100 K) indicating thus, together with ECP and rocking curve FWHM (35 arcsec), the high crystalline quality of the (1 0 0)-doped substrates. From Wall effect measurements, a free electron concentration of 5x10(17)cm(-3) and an electron mobility of 200 cm(2) V-1 s(-1) (resistivity 6.3 x 10(-2) Omega cm) at 300 K are determined. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：462 / 465

页数：4

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