New results on the solid-phase recrystallisation of ZnSe

New results are given on the solid-phase recrystallisation growth of ZnSe. The orientation relationship between initial texture of the starting material and SPR grown crystals is studied by X-ray diffraction. Twins are shown to be already present in the micrograins of the source material from SEM and TEM observations. Some attempts to decrease twinning using the strain-anneal method are reported. The SPR kinetics is studied under both Se and Zn pressure. The SPR growth is shown to be inhibited by residual donor impurities that have been identified to be mainly Al, Cl and In by photoluminescence and resonant Raman scattering experiments. Given the significant role of native defects in the SPR growth kinetics, the concentration of Zn vacancies is roughly estimated from lattice parameters measurements to be about 10(19) cm(-3) in the Se-rich samples by means of a vacancy model. Low-resistive n-type crystals are obtained by Al diffusion from Al-doped molten zinc. (C) 1998 Elsevier Science B.V. All rights reserved.