II-VI blue/green laser diodes on ZnSe substrates

被引：27

作者：

Boney, C ^{[1
]}

Yu, Z ^{[1
]}

Rowland, WH ^{[1
]}

Hughes, WC ^{[1
]}

Cook, JW ^{[1
]}

Schetzina, JF ^{[1
]}

Cantwell, G ^{[1
]}

Harsch, WC ^{[1
]}

机构：

[1] EAGLE PICHER LAB,MIAMI,OK 74354

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 03期

关键词：

D O I：

10.1116/1.588914

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article reports the first blue/green laser diodes grown on ZnSe substrates. The laser structure employed is a p-on-n separate confinement heterostructure consisting of 0.8-mu m-thick ZnMgSSe cladding layers lattice-matched to ZnSe, 0.1-mu m-thick ZnSe light guiding layers, and a single 60-200-Angstrom-thick ZnCdSe quantum well. Green laser emission (507-517 nm; 2.443-2.394 eV) was observed at temperatures from 77-220 K using cw excitation at 77 K and pulsed excitation (50 ns; 10(-1)-10(-4) duty cycle) at higher temperatures. Blue laser diodes with outputs at 485 nm (2.553 eV) at 77 K have also been fabricated and tested. (C) 1996 American Vacuum Society.

引用

页码：2259 / 2262

页数：4

共 8 条

[1] GROWTH AND CHARACTERIZATION OF SUBSTRATE-QUALITY ZNSE SINGLE-CRYSTALS USING SEEDED PHYSICAL VAPOR TRANSPORT
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[3] HIGH-BRIGHTNESS LIGHT-EMITTING-DIODES GROWN BY MOLECULAR-BEAM EPITAXY ON ZNSE SUBSTRATES
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[6] BLUE-GREEN LIGHT-EMITTING-DIODES AND LASER-DIODES BASED ON II-VI HETEROSTRUCTURES GROWN ON PREDEPOSITED GAAS BUFFER LAYERS
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[7] ROOM-TEMPERATURE BLUE-LIGHT EMITTING P-N DIODES FROM ZN(S,SE)-BASED MULTIPLE QUANTUM-WELL STRUCTURES
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