Characteristic temperature of quantum dot laser

被引:32
作者
Asryan, LV [1 ]
Suris, RA [1 ]
机构
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
关键词
semiconductor quantum dots; semiconductor junction lasers;
D O I
10.1049/el:19971286
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The characteristic temperature of a quantum dot laser, T-0, has been calculated for the first time considering carrier recombination in the optical confinement layer and violation of the charge neutrality in QDs. T-0 is shown to fall off profoundly with increasing temperature, which is in line with the available experimental results.
引用
收藏
页码:1871 / 1872
页数:2
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