Simulation of carrier capture in semiconductor quantum wells: Bridging the gap from quantum to classical transport

被引:19
作者
Register, LF [1 ]
Hess, K [1 ]
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
关键词
D O I
10.1063/1.119857
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effects of lost phase coherence on carrier capture by semiconductor quantum wells are simulated using Schrodinger Equation Monte Carlo. Results are shown for polar-optical-phonon-induced capture of both electrons and holes, and for both monoenergetic and thermal distributions of incident charge carriers. Results suggest that semiclassical modeling of hole capture may be sufficient, provided that quantum mechanical reflection from the individual heterointerfaces still is taken into account, However, for a quantum well laser optimized to operate at an electron capture resonance, semiclassical calculations blind to the resonance structure would underestimate the capture rate, while Golden-Rule calculations, which assume complete phase coherence, could somewhat overestimate it. (C) 1997 American Institute of Physics.
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页码:1222 / 1224
页数:3
相关论文
共 9 条
[1]   CARRIER CAPTURE INTO A SEMICONDUCTOR QUANTUM-WELL [J].
BLOM, PWM ;
SMIT, C ;
HAVERKORT, JEM ;
WOLTER, JH .
PHYSICAL REVIEW B, 1993, 47 (04) :2072-2081
[2]   RESONANT CARRIER CAPTURE BY SEMICONDUCTOR QUANTUM-WELLS [J].
BRUM, JA ;
BASTARD, G .
PHYSICAL REVIEW B, 1986, 33 (02) :1420-1423
[3]  
GRUPEN M, 1995, P SPIES OE LASE C SA
[4]  
GRUPEN M, 1993, 1993 INT EL DEV M IE, P609
[5]   ELECTRON OPTICAL-PHONON INTERACTION IN SINGLE AND DOUBLE HETEROSTRUCTURES [J].
MORI, N ;
ANDO, T .
PHYSICAL REVIEW B, 1989, 40 (09) :6175-6188
[6]   NUMERICAL-SIMULATION OF ELECTRON-TRANSPORT IN MESOSCOPIC STRUCTURES WITH WEAK DISSIPATION [J].
REGISTER, LF ;
HESS, K .
PHYSICAL REVIEW B, 1994, 49 (03) :1900-1907
[7]  
REGISTER LF, UNPUB VLSI DESIGN 5
[8]  
REGISTER LF, 1992, PHYS REV B, V45, P89756
[9]   CARRIER COLLECTION IN A SEMICONDUCTOR QUANTUM WELL [J].
SHICHIJO, H ;
KOLBAS, RM ;
HOLONYAK, N ;
DUPUIS, RD ;
DAPKUS, PD .
SOLID STATE COMMUNICATIONS, 1978, 27 (10) :1029-1032